Semiconductor Photoresists in EUV Lithography

The Chemistry of Semiconductor Photoresists (EUV Lithography)

Aug 03, 2026

• Introduction: Shrinking to 2nm and below—the critical role of Extreme Ultraviolet (13.5nm) lithography.
• Photoresist Formulations:
- Chemically Amplified Resists (CAR): Polymers, Photoacid Generators (PAGs), and quenchers.
- Metal Oxide Resists (MOR): Tin oxide (SnOx) networks for higher etch resistance and resolution.
• Purity Requirements: Parts-per-trillion (ppt) impurity limits, trace metal control, and batch-to-batch consistency.
• Supply Chain Outlook: Global market leaders, raw material sourcing, and localized fab supply chains.